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Enhancing the forward gate bias robustness in p-GaN gate high-electron-mobility transistors through doping profile engineering
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- Journal Article
- A1
- open access
Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile
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- Journal Article
- A1
- open access
Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping
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GaN power devices on 200 mm engineered substrates
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- Journal Article
- A1
- open access
Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode
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Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN
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Design and characterization of p-body layer of vertical GaN devices on engineered substrates
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- Journal Article
- A1
- open access
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs
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- Journal Article
- A1
- open access
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization
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- Journal Article
- A1
- open access
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability