Ghent University Academic Bibliography

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Monolithic 650-V dual-gate p-GaN bidirectional switch

Giulio Baratella (UGent) , U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, Benoit Bakeroot (UGent) and S. Decoutere

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(11). p.6904-6909
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Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024. In International Reliability Physics Symposium
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P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
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TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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Using RESURF technique for edge termination of semi-vertical GaN devices

Benoit Bakeroot (UGent) , K. Geens, M. Borga, H. Liang, S. You and S. Decoutere

(2020) 2020 13TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM 2020). In International Conference on Advanced Semiconductor Devices and Microsystems p.1-4
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Exploration of gate trench module for vertical GaN devices

M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, Benoit Bakeroot (UGent) , S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, et al.

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee and P. Moens

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

S. Stoffels, N. Posthuma, S. Decoutere, Benoit Bakeroot (UGent) , A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, et al.

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

Academic Bibliography

Monolithic 650-V dual-gate p-GaN bidirectional switch

Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Using RESURF technique for edge termination of semi-vertical GaN devices

Exploration of gate trench module for vertical GaN devices

Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

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