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Precise optical characterization of SiGe thin films for next generation transistor metrology
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Precise optical characterization of SiGe thin films for next generation transistor metrology
(2025) 40TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, EMLC 2025. In Proceedings of SPIE 13787(137870T). -
Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)
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- P1
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3D-DRAM Si/SiGe superlattices : inspection strategies and evaluation
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- Journal Article
- A1
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Interface sharpness in stacked thin film structures : a comparison of soft X-ray reflectometry and transmission electron microscopy
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- P1
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Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures
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Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications
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- Journal Article
- A2
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Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices