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Towards 100 GHz waveguide Ge/Si avalanche photodiodes for high-speed optical interconnects
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- Journal Article
- A1
- open access
High-performance thermally-robust C-band GeSi FK electro-absorption modulators on 300-mm silicon photonics platform
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360 Gbps Ge-on-Si avalanche photodiodes operating in the O- and C-band
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A Ge/Si photodiode exceeding 110 GHz with 0.9 A/W, low capacitance and operating at -0.5 V for O and C-band applications
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320 Gb/s unamplified transmission using 100 GHz Ge PD and TFLN MZM on a foundry-compatible SiPh platform co-packaged with traveling-wave drivers and TIAs
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- Journal Article
- A1
- open access
Design of a high-speed waveguide Ge/Si SACM avalanche photodiode
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- Conference Paper
- P1
- open access
Beyond 100 GHz, high responsivity, waveguide-coupled deeply recessed germanium on silicon photodiode
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- Conference Paper
- P1
- open access
70 GHz, 2 A/W, waveguide-coupled germanium-in-silicon avalanche photodiode
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110 GHz GeSi electroabsorption modulator on a 300mm SiPh platform enabling high-density 400G/lane IM/DD links
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- Journal Article
- A1
- open access
64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform