Show
Sort by
-
High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si
-
- Journal Article
- A1
- open access
Electrical properties of extended defects in strain relaxed GeSn
-
Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers
-
Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties
-
- Journal Article
- A1
- open access
Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)
-
TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
-
Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
-
In situ UHVEM study of {113}-defect formation in Si nanowires
-
- Conference Paper
- C3
- open access
In situ UHVEM study of {113}-defect formation in Si nanowires
-
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices