Ghent University Academic Bibliography

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High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Srinivasan Ashwyn Srinivasan, Clement Porret, Ewoud Vissers (UGent) , Paola Favia, Jeroen De Coster, Hugo Bender, Roger Loo, Dries Van Thourhout (UGent) , Joris Van Campenhout and Marianna Pantouvaki

(2020) IEEE JOURNAL OF QUANTUM ELECTRONICS. 56(1).
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Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2018) APPLIED PHYSICS LETTERS. 113(2).
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Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

Min-Hsiang Mark Hsu, Dries Van Thourhout (UGent) , Marianna Pantouvaki, Johan Meersschaut, Thierry Conard, Olivier Richard, Hugo Bender, Paola Favia, Maria Vila, Rosalia Cid, et al.

(2017) APPLIED PHYSICS EXPRESS. 10(6). p.1-4
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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Suseendran Jayachandran, Eddy Simoen (UGent) , Koen Martens, Johan Meersschaut, Hugo Bender, Matty Caymax, Wilfried Vandervorst, Marc Heyns and Annelies Delabie

(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(7). p.P396-P403
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Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)

Min-Hsiang Hsu (UGent) , Clement Merckling, Salim El Kazzi, Marianna Pantouvaki, Oliver Richard, Hugo Bender, Johan Meersschaut, Joris Van Campenhout, Philippe Absil and Dries Van Thourhout (UGent)

(2016) JOURNAL OF APPLIED PHYSICS. 120(22).

Academic Bibliography

High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Electrical properties of extended defects in strain relaxed GeSn

Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)

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