Ghent University Academic Bibliography

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Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir (UGent) , Yannick De Koninck (UGent) , Saroj Kanta Patra, Marina Baryshnikova, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout and Dries Van Thourhout (UGent)

(2024) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 57(40).
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Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform

Younghyun Kim, Didit Yudistira, Bernardette Kunert, Marina Baryshnikova, Reynald Alcotte, Cenk Ibrahim Özdemir (UGent) , Sanghyeon Kim, Sebastien Lardenois, Peter Verheyen, Joris Van Campenhout, et al.

(2022) PHOTONICS RESEARCH. 10(6). p.1509-1516
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- Journal Article
- A1
- open access
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

Davide Colucci (UGent) , Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb (UGent) , Yannick De Koninck (UGent) , Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, Robert Langer, et al.

(2022) OPTICS EXPRESS. 30(8). p.13510-13521
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- Journal Article
- A1
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Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer

Yuting Shi, Marianna Pantouvaki, Joris Van Campenhout, Davide Colucci (UGent) , Marina Baryshnikova, Bernardette Kunert and Dries Van Thourhout (UGent)

(2021) OPTICS EXPRESS. 29(10). p.14649-14657
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Constructing III-V nano-ridge photodetectors on silicon

Cenk Ibrahim Özdemir (UGent) , Dries Van Thourhout (UGent) , Yannick De Koninck, Didit Yudistira, Marina Baryshnikova, Nadezda Kuznetsova, Bernardette Kunert, Marianna Pantouvaki and Joris Van Campenhout

(2021) COMPOUND SEMICONDUCTOR. 27(5). p.46-50
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- Conference Paper
- P1
- open access
0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir (UGent) , Yannick De Koninck, Didit Yudistira, Nadezda Kuznetsova, Marina Baryshnikova, Dries Van Thourhout (UGent) , 􀀃Bernardette Kunert, Marianna Pantouvaki and Joris Van Campenhout

(2021) 2020 European Conference on Optical Communications (ECOC).
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Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir (UGent) , Yannick De Koninck (UGent) , Didit Yudistira, Nadezda Kuznetsova, Marina Baryshnikova, Dries Van Thourhout (UGent) , Bernardette Kunert, Marianna Pantouvaki and Joris Van Campenhout

(2021) JOURNAL OF LIGHTWAVE TECHNOLOGY. 39(16). p.5263-5269
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InGaAs nano-ridge laser emitting in the telecom O-band monolithically grown on a 300 mm Si wafer

Davide Colucci (UGent) , Yuting Shi, Marina Baryshnikova, Yves Mols, Muhammad Muneeb (UGent) , Yannick De Koninck, Marianna Pantouvaki, Joris Van Campenhout, Bernardette Kunert and Dries Van Thourhout (UGent)

(2021) 2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC).
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Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

Yuting Shi, Lisa C. Kreuzer, Nils C. Gerhardt, Marianna Pantouvaki, Joris Van Campenhout, Marina Baryshnikova, Robert Langer, Dries Van Thourhout (UGent) and Bernardette Kunert

(2020) JOURNAL OF APPLIED PHYSICS. 127(10).
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Nano-ridge engineering of GaSb for the integration of InAs/GaSb heterostructures on 300 mm (001) Si

Marina Baryshnikova, Yves Mols, Yoshiyuki Ishii, Reynald Alcotte, Han Han, Thomas Hantschel, Olivier Richard, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout (UGent) , et al.

(2020) CRYSTALS. 10(4).

Academic Bibliography

Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform

Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer

Constructing III-V nano-ridge photodetectors on silicon

0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

InGaAs nano-ridge laser emitting in the telecom O-band monolithically grown on a 300 mm Si wafer

Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

Nano-ridge engineering of GaSb for the integration of InAs/GaSb heterostructures on 300 mm (001) Si

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