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- Conference Paper
- C1
- open access
Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform
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- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
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High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs
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Study and characterization of GaN MOS capacitors : planar vs trench topographies
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric