Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author="BANGERT, U*" or (type exact bookEditor and editor="BANGERT, U*") Add to list Journal Article A1 Indium segregation in InGaN quantum-well structures. N DUXBURY, U BANGERT, P DAWSON, EJ THRUSH, W VAN DER STRICHT, K JACOBS and Ingrid Moerman (UGent) (2000) APPLIED PHYSICS LETTERS. 76(12). p.1600-1602 Add to list Journal Article A1 Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD. N DUXBURY, P DAWSON, U BANGERT, EJ THRUSH, Wim Van der Stricht, Koen Jacobs and Ingrid Moerman (UGent) (1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.355-359 Add to list Journal Article A1 Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures. N DUXBURY, U BANGERT, P SHANG, EJ THRUSH and K JACOBS (1999) ELECTRON MICROSCOPY AND ANALYSIS 1999. 161. p.207-210 Add to list Journal Article A1 Electron energy loss studies at dislocations in GaN. P SHANG, U BANGERT, AJ HARVEY, N DUXBURY and K JACOBS (1999) ELECTRON MICROSCOPY AND ANALYSIS 1999. 161. p.323-326 Add to list Conference Paper C1 Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD N DUXBURY, P DAWSON, U BANGERT, EJ THRUSH, Wim Van der Stricht, Koen Jacobs and Ingrid Moerman (UGent) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France.