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SiGe:B Source/Drain epitaxy for advanced device applications
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JST / ASPIRE project versatile quantum engineering of group-IV alloy materials for semiconductor heterogeneous integrated devices : Imec’s involvement
(2025) p.1-2 -
Inline X-ray metrology for complementary field-effect transistors (CFET)
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- Journal Article
- A1
- open access
Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices
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- Conference Paper
- C3
- open access
DLTS assessment of grown-in defects in hetero-epitaxial gate stacks for stacked silicon nanosheet channels
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- Conference Paper
- C3
- open access
Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions