Ghent University Academic Bibliography

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Effect of binder content in cu-in-se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells

M Buffiere, AE Zaghi, N Lenaers, M Batuk, Samira Khelifi (UGent) , J Drijkoningen, J Hamon, A Stesmans, J Kepa, VV Afanas'ev, et al.

(2014) JOURNAL OF PHYSICAL CHEMISTRY C. 118(47). p.27201-27209
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Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks

VV Afanas'ev, F De Stefano, M Houssa, A Stesmans, L Goux, K Opsomer, Christophe Detavernier (UGent) , JA Kittl and M Jurczak

(2013) THIN SOLID FILMS. 533. p.34-37
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Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

L Goux, W Kim, Karl Opsomer (UGent) , A Belmonte, G Kar, F De Stefano, VV Afanas'ev, U Celano, M Houssa, Wouter Devulder (UGent) , et al.

(2013) ECS Transactions. In ECS Transactions 58(7). p.175-180
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Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

K Tomida, M Popovici, Karl Opsomer (UGent) , N Menou, WC Wang, A Delabie, J Swerts, J Steenbergen, B Kaczer, SV Elshocht, et al.

(2010) IOP CONFERENCE SERIES. MATERIALS SCIENCE AND ENGINEERING. In IOP Conference Series-Materials Science and Engineering 8.
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- Journal Article
- A1
Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, Geert Rampelberg (UGent) , K Tomida, MA Pawlak, Christophe Detavernier (UGent) , et al.

(2009) JOURNAL OF APPLIED PHYSICS. 106(9).
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High-k dielectrics for future generation memory devices (Invited Paper)

JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, C Adelmann, MA Pawlak, K Tomida, A Rothschild, et al.

(2009) MICROELECTRONIC ENGINEERING. 86(7-9). p.1789-1795
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- Journal Article
- A1
Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine

VV Afanas'ev, Michel Depas, JMM De Nijs and P Balk

(1993) MICROELECTRONIC ENGINEERING. 22(1-4). p.93-96

Academic Bibliography

Effect of binder content in cu-in-se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells

Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks

Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

High-k dielectrics for future generation memory devices (Invited Paper)

Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine

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