Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author=" Rampazzo, F." or (type any "bookEditor issueEditor" and editor=" Rampazzo, F.") Add to list Journal Article A1 Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al. (2022) MICROELECTRONICS RELIABILITY. 138.