Ghent University Academic Bibliography

Your filters: cql: author=" Posthuma, N." or (type any "bookEditor issueEditor" and editor=" Posthuma, N.")

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Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

M. Millesimo, M. Borga, L. Valentini, Benoit Bakeroot (UGent) , N. Posthuma, A. Vohra, S. Decoutere, C. Fiegna and A. N. Tallarico

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(10). p.5203-5209
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849
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Gate reliability of p-GaN power HEMTs under pulsed stress condition

M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium p.10B.2-1-10B.2-6
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Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

N. Modolo, M. Fregolent, F. Masin, A. Benato, A. Bettini, M. Buffolo, C. De Santi, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , et al.

(2022) MICROELECTRONICS RELIABILITY. 138.

Academic Bibliography

Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

Gate reliability of p-GaN power HEMTs under pulsed stress condition

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

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