Ghent University Academic Bibliography

Your filters: cql: author=" Decoutere, S." or (type any "bookEditor issueEditor" and editor=" Decoutere, S.")

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Route toward commercially manufacturable vertical GaN devices

Karen Geens, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, U. Chatterjee, D. Cingu, Benoit Bakeroot (UGent) , et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(3). p.1488-1493
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Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

M. Millesimo, M. Borga, L. Valentini, Benoit Bakeroot (UGent) , N. Posthuma, A. Vohra, S. Decoutere, C. Fiegna and A. N. Tallarico

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(10). p.5203-5209
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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium
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Gate reliability of p-GaN power HEMTs under pulsed stress condition

M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium p.10B.2-1-10B.2-6
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849
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Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

D. Favero, C. De Santi, K. Mukherjee, K. Geens, M. Borga, Benoit Bakeroot (UGent) , S. You, S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Study and characterization of GaN MOS capacitors : planar vs trench topographies

K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, Benoit Bakeroot (UGent) , P. Diehle, F. Altmann, G. Meneghesso, et al.

(2022) APPLIED PHYSICS LETTERS. 120(14).
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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al.

(2022) MICROELECTRONICS RELIABILITY. 138.
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Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

N. Modolo, M. Fregolent, F. Masin, A. Benato, A. Bettini, M. Buffolo, C. De Santi, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , et al.

(2022) MICROELECTRONICS RELIABILITY. 138.

Academic Bibliography

Route toward commercially manufacturable vertical GaN devices

Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

Gate reliability of p-GaN power HEMTs under pulsed stress condition

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

Study and characterization of GaN MOS capacitors : planar vs trench topographies

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

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