Ghent University Academic Bibliography

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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium
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Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

D. Favero, C. De Santi, K. Mukherjee, K. Geens, M. Borga, Benoit Bakeroot (UGent) , S. You, S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Study and characterization of GaN MOS capacitors : planar vs trench topographies

K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, Benoit Bakeroot (UGent) , P. Diehle, F. Altmann, G. Meneghesso, et al.

(2022) APPLIED PHYSICS LETTERS. 120(14).
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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al.

(2022) MICROELECTRONICS RELIABILITY. 138.
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- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

N. Modolo, M. Fregolent, F. Masin, A. Benato, A. Bettini, M. Buffolo, C. De Santi, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , et al.

(2022) MICROELECTRONICS RELIABILITY. 138.

Academic Bibliography

High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

Study and characterization of GaN MOS capacitors : planar vs trench topographies

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

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