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- Journal Article
- A1
- open access
Route toward commercially manufacturable vertical GaN devices
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- Journal Article
- A1
- open access
Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress
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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps
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Gate reliability of p-GaN power HEMTs under pulsed stress condition
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- Journal Article
- A1
- open access
The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs
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Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs
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Study and characterization of GaN MOS capacitors : planar vs trench topographies
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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
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- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs