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Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
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The ν/G criterion for defect-free silicon single crystal growth from a melt revisited: implication for large diameter crystals
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On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the melt
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- Journal Article
- A1
- open access
Germanium doping for improved silicon substrates and devices
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A study of the parameters influencing the microstructure of thick La2Zr2O7 films
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Molecular dynamics simulation of intrinsic point defects in germanium
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Mechanism of in-plane alignment in magnetron sputtered biaxially aligned yttria-stabilized zirconia
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- Journal Article
- A1
- open access
GSMBE growth of GaInAsP/InP 1.3 mu m-TM-lasers for monolithic integration with optical waveguide isolator
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Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers
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Influence of the deposition parameters on the biaxial alignment of MgO grown by unbalanced magnetron sputtering
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Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors
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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
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Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.
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Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide.
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Chemical mapping of InGaN MQWs.
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Material optimisation for AlGaN/GaN HFET applications.
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MOVPE based Zn diffusion into InP and InAsP/InP hetero structures.
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InAlGaP microcavity LEDs on Ge-substrates
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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.
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InP 1.3 mu m microcavity LEDs with high quantum efficiency.
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Effects of rapid thermal annealing on electron beam evaporated SrS: Ce thin film electroluminescent devices made in H2S ambient.
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Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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Growth and in situ monitoring of GaN using IR interference effects.
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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
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Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor.
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Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.
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Growth and characterization of InAlGaAs(P)/InGaAs(P) MQW structures.
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Influence of the solution composition on the stoichiometry of Na+- and of K+-containing carbonated apatites obtained by the hydrolysis of monetite
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Optical properties of a ZnSSe microcavity fabricated by epitaxial lift-off.
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Monolithic integration of a single quantum well laser diode and a mode-size convenor using shadow-masked metalorganic vapour phase epitaxial growth.
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MONOLITHIC INTEGRATION OF A SINGLE-QUANTUM-WELL LASER-DIODE AND A MODE-SIZE CONVERTER USING SHADOW-MASKED METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH.
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Optimalization of the preparation of Na+- and CO-3(2)-containing hydroxyapatite by the hydrolysis of monetite.
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Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells
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Anisotropie photoluminescence behaviour of vertical AlGaAs structures grown on gratings.
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The kinetics of dissolution of octacalcium phosphate. 2. The combined effects of pH and solution Ca/P ratio.
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ANISOTROPIC PHOTOLUMINESCENCE BEHAVIOR OF VERTICAL ALGAAS STRUCTURES GROWN ON GRATINGS.
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Selective MOVPE growth of GaAs on Si and its applications to LEDs
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NONPLANAR MOVPE GROWTH USING A NOVEL SHADOW-MASKING TECHNIQUE
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INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS
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INFLUENCE OF THE NUCLEATION AND ANNEALING CONDITIONS ON THE QUALITY OF INP LAYERS GROWN ON GAAS BY MOCVD
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METALORGANIC VAPOR-PHASE HETEROEPITAXIAL GROWTH OF (AL)GAAS ON INP FOR DEVICE APPLICATIONS
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Polycrystalline CdSe films for thin film transistors.