Show 50 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: parent exact "ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUC... Add to list Journal Article A1 On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C. MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS and Paul Clauws (UGent) (1995) ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4. 196-. p.1147-1151