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The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 -
Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235 -
Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Confocal microscopy and spectroscopy of InGaN epilayers on sapphire.
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Exciton localization and the Stokes' shift in InGaN epilayers.
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Lateral epitaxial overgrowth for GaN-based LEDs
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Intrinsic infrared luminescence from InGaN layers.
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Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.
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OMVPE-based epitaxial lateral overgrowth for GaN LEDs.
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Violet-blue InGaN/GaN MQW light emitting diodes on epitaxially laterally overgrown GaN.
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Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.
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Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.
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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.
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Intrinsic infrared luminescence from InGaN epilayers.
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The optical and structural properties of InGaN epilayers with very high indium content.
(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.292-297 -
Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD.
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Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.
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Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy.
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Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.
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Epitaxial lateral overgrowth of GaN by OMVPE.
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InGaN/GaN MQW blue light emitting diodes grown by OMVPE.
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MOVPE growth and characterization of high quality InGaN films
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MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells
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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
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MOVPE growth optimization of high quality InGaN films
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Getter stabilized zeolite materials for specialty GAS purification
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High Indium content InGaN films and quantum wells
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Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices
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Study of GaN films by metalorganic chemical vapour deposition
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Study of GaN films grown by metalorganic chemical vapour deposition
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The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
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Accelerated aging of InGaN/GaN LED by electrical stressing
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Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD