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- Journal Article
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Electronic properties of iron and cobalt impurity centres in germanium
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A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization
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- Journal Article
- A1
- open access
Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
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Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
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What do we know about hydrogen-induced thermal donors in silicon?
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A Comparison of Intrinsic Point Defect Properties in Si and Ge
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Metal in-diffusion during Fe and co-germanidation of germanium
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Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium
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Brother silicon, sister germanium
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On the impact of metal impurities on the carrier lifetime in n-type germanium
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A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
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Deep level transient spectroscopy of transition metal impurities in germanium
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Lifetime and leakage current considerations in metal-doped germanium
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Metals in germanium
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Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium
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Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium
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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon
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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium
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A deep-level transient spectroscopy study of transition metals in n-type germanium
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P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon
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DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
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Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon
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Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy
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DLTS studies of high-temperature electron irradiated Cz n-Si
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Grown-in lattice defects and diffusion in Czochralski-grown germanium
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A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon
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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
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Analysis of thermal donor formation in n-type CZ silicon
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Analysis of oxygen thermal donor formation in n-type Cz silicon
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Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188 -
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
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Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.
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Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.
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Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.
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The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon
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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.
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High energy proton radiation induced defects in tin doped n-type silicon.
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Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM.
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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.
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Defect analysis of n-type silicon strained layers.
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Tin doping effects in silicon
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Tin-related deep levels in proton-irradiated n-type silicon.
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Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.
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Study of recombination properties of neutron transmutation doped silicon wafers.
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ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.
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GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.