Ghent University Academic Bibliography

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- Conference Paper
- P1
Metal in-diffusion during Fe and co-germanidation of germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2008) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII. 131-133. p.47-52
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- Journal Article
- A1
Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2008) JOURNAL OF APPLIED PHYSICS. 104(2).
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- Journal Article
- A1
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

K OPSOMER, Davy Deduytsche (UGent) , Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , A LAUWERS, K MAEX and C LAVOIE

(2007) APPLIED PHYSICS LETTERS. 90(3).
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- Journal Article
- A1
Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

C TORREGIANI, Charlotte Van Bockstael, Christophe Detavernier (UGent) , C LAVOIE, A LAUWERS, K MAEX and JA KITTL

(2007) MICROELECTRONIC ENGINEERING. 84(11). p.2533-2536
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- Journal Article
- A1
Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2006) APPLIED PHYSICS LETTERS. 89(20).
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- Journal Article
- A1
Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Stefaan Forment and Paul Clauws (UGent)

(2006) APPLIED PHYSICS LETTERS. 88(18).
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- Journal Article
- A1
A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMER, E SIMOEN, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Stefaan Forment and Paul Clauws (UGent)

(2006) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 9(4-5). p.554-558
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- Journal Article
- A1
Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , W VANDERVORST and K MAEX

(2004) MICROELECTRONIC ENGINEERING. 71(3-4). p.252-261
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- Journal Article
- A1
Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems

Christophe Detavernier (UGent) , XP QU, Roland Vanmeirhaeghe (UGent) , BZ LI and K MAEX

(2003) JOURNAL OF MATERIALS RESEARCH. 18(7). p.1668-1678
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- Conference Paper
- C1
CoSi2 formation using a Ti capping layer-Influence of processing conditions on CoSi2 nucleation

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and K MAEX

(2002) MRS Proc. 670 (Spring Meeting San Francisco 2001), Materials Research Society, Pittsburgh, PA, USA, 2002, K 7.4.1-7.4.6.
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- Conference Paper
- C1
The influence of Ti and TiN on the thermal stability of cobaltdisilicide

Christophe Detavernier (UGent) , GP RU, Roland Vanmeirhaeghe (UGent) and K MAEX

(2002) MRS Proc. 670 (Spring Meeting San Francisco 2001), Materials Research Society, Pittsburgh, PA, USA, 2002, K 6.7.1-6.7.6.
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- Journal Article
- A1
CoSi2 formation in the presence of carbon.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , H BENDER, O RICHARD, B BRIJS and K MAEX

(2002) JOURNAL OF APPLIED PHYSICS. 92(3). p.1207-1211
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- Journal Article
- A1
CoSi2 formation through SiO2

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon and K MAEX

(2001) THIN SOLID FILMS. 386(1). p.19-26
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- Journal Article
- A1
CoSi2 nucleation in the presence of Ge.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon and K MAEX

(2001) THIN SOLID FILMS. 384(2). p.243-250
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- Journal Article
- A1
Orientation-dependent stress build-up during the formation of epitaxial CoSi2.

A STEEGEN, Christophe Detavernier (UGent) , Albert Lauwers, K MAEX, Roland Vanmeirhaeghe (UGent) and Felix Cardon

(2001) MICROELECTRONIC ENGINEERING. 55(1-4). p.145-150
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- Journal Article
- A1
Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, K MAEX, H BENDER, B BRIJS and W VANDERVORST

(2001) JOURNAL OF APPLIED PHYSICS. 89(4). p.2146-2150
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- Journal Article
- A1
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Influence of mixing entropy on the nucleation of CoSi2

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon and K Maex

(2000) PHYSICAL REVIEW B. 62(18). p.12045-12051
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- Journal Article
- A2
The influence of mixing entropy on the nucleationof CoSi2.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon and K MAEX

(2000) PHYSICAL REVIEW B. 62(18). p.12045-12051
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- Journal Article
- A1
The influence of Ti cappings layes on CoSi2 formation.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, RA DONATON and K MAEX

(2000) MICROELECTRONIC ENGINEERING. 50(1-4). p.125-132
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- Journal Article
- A1
Influence of Ti on CoSi2 nucleation.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, K MAEX, W VANDERVORST and B BRIJS

(2000) APPLIED PHYSICS LETTERS. 77(20). p.3170-3172
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- Journal Article
- A1
CoSi2 formation in the Ti/Co/SiO2/Si system

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, K MAEX, H BENDER and SY ZHU

(2000) JOURNAL OF APPLIED PHYSICS. 88(1). p.133-140
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- Journal Article
- A1
Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.

GP RU, XP QU, SY ZHU, BZ LI, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, RA DONATON and K MAEX

(2000) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 18(4) 1942-1948).
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- Journal Article
- A1
Nondestructive characterization of thin silicides using x-ray reflectivity.

Christophe Detavernier (UGent) , Roger De Gryse (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, GP RU, XP QU, BZ LI, RA DONATON and K MAEX

(2000) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS. 18(2). p.470-476
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- Journal Article
- A1
CoSi2 formation in the presence of interfacial silicon oxide.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, RA DONATON and K MAEX

(1999) APPLIED PHYSICS LETTERS. 74(20). p.2930-2932
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- Conference Paper
- P1
The influence of Ti capping layers on CoSi2 formation in tee presence of interfacial oxide

Christophe Detavernier (UGent) , R DONATON, K MAEX, S JIN, H BENDER, Roland Vanmeirhaeghe (UGent) and Felix Cardon

(1999) ADVANCED INTERCONNECTS AND CONTACTS. p.139-144
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- Conference Paper
- P1
A BEEM study of PtSi Schottky contacts on ion-milled Si

GP RU, Christophe Detavernier (UGent) , RA DONATON, Anja Blondeel, Paul Clauws (UGent) , Roland Vanmeirhaeghe (UGent) , Felix Cardon, K MAEX, XP QU, SY ZHU, et al.

(1999) ADVANCED INTERCONNECTS AND CONTACTS. 564. p.201-206
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- Journal Article
- A1
Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment.

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , R DONATON, K MAEX and Felix Cardon

(1998) JOURNAL OF APPLIED PHYSICS. 84(6). p.3226-3231
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- Journal Article
- A1
Electrical-transport in (100)CoSi2/Si contacts.

Albert Lauwers, KK LARSEN, M VANHOVE, Ronald Verbeeck (UGent) , K MAEX, M VANROSSUM, An Vercaemst, Roland Vanmeirhaeghe (UGent) and Felix Cardon

(1995) JOURNAL OF APPLIED PHYSICS. 77(6). p.2525-2536
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- Journal Article
- A1
FORMATION OF ULTRATHIN COSI2 FILMS USING A 2-STEP LIMITED REACTION PROCESS.

RJ SCHREUTELKAMP, W COPPYE, W DEBOSSCHER, Roland Vanmeirhaeghe (UGent) , L VANMEIRHAEGHE, J VANHELLEMONT, B DEWEERDT, Albert Lauwers and K MAEX

(1993) JOURNAL OF MATERIALS RESEARCH. 8(12). p.3111-3121

Academic Bibliography

Metal in-diffusion during Fe and co-germanidation of germanium

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems

CoSi2 formation using a Ti capping layer-Influence of processing conditions on CoSi2 nucleation

The influence of Ti and TiN on the thermal stability of cobaltdisilicide

CoSi2 formation in the presence of carbon.

CoSi2 formation through SiO2

CoSi2 nucleation in the presence of Ge.

Orientation-dependent stress build-up during the formation of epitaxial CoSi2.

Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.

Influence of mixing entropy on the nucleation of CoSi2

The influence of mixing entropy on the nucleationof CoSi2.

The influence of Ti cappings layes on CoSi2 formation.

Influence of Ti on CoSi2 nucleation.

CoSi2 formation in the Ti/Co/SiO2/Si system

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.

Nondestructive characterization of thin silicides using x-ray reflectivity.

CoSi2 formation in the presence of interfacial silicon oxide.

The influence of Ti capping layers on CoSi2 formation in tee presence of interfacial oxide

A BEEM study of PtSi Schottky contacts on ion-milled Si

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment.

Electrical-transport in (100)CoSi2/Si contacts.

FORMATION OF ULTRATHIN COSI2 FILMS USING A 2-STEP LIMITED REACTION PROCESS.

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