Academic Bibliography

Search 200 years of publications by Ghent University researchers.

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Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon

K Lauer, C Möller, D Schulze, C Ahrens and Jan Vanhellemont (UGent)

(2016) Solid State Phenomena. 242. p.90-95
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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Eddy Simoen (UGent) , Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Jun Luo, Chao Zhao and Cor Claeys

(2016) Solid State Phenomena. 242. p.449-458
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Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors

Eddy Simoen (UGent) , Valentina Ferro and Barry O'Sullivan

(2016) Solid State Phenomena. 242. p.61-66
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Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont (UGent)

(2014) Solid State Phenomena. In Solid State Phenomena 205-206. p.163-168
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Internal friction and magnetic after-effect study of dislocation dynamics in thermally aged Fe-1%Cu-C alloys

Boris Minov (UGent) , Luc Dupré (UGent) and Milan Konstantinovic

(2012) Solid State Phenomena. 184. p.215-220

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