Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author="Zhao, Ming" or (type any "bookEditor issueEditor" and editor="Zhao, Ming")

Add to list
Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot (UGent) , Hu Liang, Shuzhen You, Zhicheng Wu, Ming Zhao, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON POWER ELECTRONICS. 36(5). p.4927-4930
Add to list
Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
Add to list
- Journal Article
- A1
- open access
Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot (UGent) , Ming Zhao, Stefaan Decoutere and Martin Kuball

(2020) IEEE ELECTRON DEVICE LETTERS. 41(12). p.1754-1757
Add to list
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833
Add to list
- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580

Academic Bibliography

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Reliability of p-GaN gate HEMTs in reverse conduction

Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Contents

Support

Contact