Ghent University Academic Bibliography

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Your filters: cql: author="Zanoni, E." or (type any "bookEditor issueEditor" and editor="Zanoni, E.")

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- Journal Article
Exploration of gate trench module for vertical GaN devices

M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, Benoit Bakeroot (UGent) , S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, et al.

(2020) MICROELECTRONICS RELIABILITY. 114.
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Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

A. Tajalli, E. Canato, A. Nardo, M. Meneghini, Arno Stockman (UGent) , Peter Moens, E. Zanoni and G. Meneghesso

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman (UGent) , A. Banerjee and P. Moens

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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- Journal Article
- A1
- open access
ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, Arno Stockman (UGent) , A. Banerjee, P. Moens, E. Zanoni, et al.

(2019) MICROELECTRONICS RELIABILITY. 100-101.
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno Stockman (UGent) , A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(1). p.372-377

Academic Bibliography

Exploration of gate trench module for vertical GaN devices

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

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