Ghent University Academic Bibliography

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Your filters: cql: author="Favia, Paola" or (type exact bookEditor and editor="Favia, Paola")

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Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke Shimura, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan Aguilera, Georgios Katsaros, Paola Favia, Han Han, Danny Wan, Kristiaan De Greve, et al.

(2024) Materials Science in Semiconductor Processing. 174.
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High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Srinivasan Ashwyn Srinivasan, Clement Porret, Ewoud Vissers (UGent) , Paola Favia, Jeroen De Coster, Hugo Bender, Roger Loo, Dries Van Thourhout (UGent) , Joris Van Campenhout and Marianna Pantouvaki

(2020) IEEE JOURNAL OF QUANTUM ELECTRONICS. 56(1).
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Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

Min-Hsiang Mark Hsu, Dries Van Thourhout (UGent) , Marianna Pantouvaki, Johan Meersschaut, Thierry Conard, Olivier Richard, Hugo Bender, Paola Favia, Maria Vila, Rosalia Cid, et al.

(2017) APPLIED PHYSICS EXPRESS. 10(6). p.1-4
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich Bühler, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen (UGent) , et al.

(2015) IEEE TRANSACTIONS ON ELECTRON DEVICES. 62(4). p.1079-1084
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Seed layer and multistack approaches to reduce leakage in SrTiO3-based metal-insulator-metal capacitors using TiN bottom electrode

Nicolas Menou, Mihaela Popovici, Karl Opsomer, Ben Kaczer, Malgorzata A Pawlak, Christoph Adelmann, Alexis Franquet, Paola Favia, Hugo Bender, Christophe Detavernier (UGent) , et al.

(2010) JAPANESE JOURNAL OF APPLIED PHYSICS. 49(4).

Academic Bibliography

Compressively strained epitaxial Ge layers for quantum computing applications

High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Seed layer and multistack approaches to reduce leakage in SrTiO3-based metal-insulator-metal capacitors using TiN bottom electrode

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