Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Publication type

Year

Subject

Organization

Show Sort by

Your filters: cql: author="Boivin, P" or (type exact bookEditor and editor="Boivin, P")

Add to list
Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements

Stéphane Burignat (UGent) , C Plossu and P Boivin

(2007) JOURNAL OF NON-CRYSTALLINE SOLIDS. 353(16-17). p.1624-1630
Add to list
Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures

S Croci, C Plossu, Stéphane Burignat (UGent) and P Boivin

(2003) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 14(5-7). p.311-314
Add to list
Quantitative study of charge trapping in SiO2 during bipolar Fowler-Nordheim injection

C Busseret, N Baboux, C Plossu, Stéphane Burignat (UGent) and P Boivin

(2003) JOURNAL OF NON-CRYSTALLINE SOLIDS. 322(1-3). p.191-198
Add to list
Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells

N Baboux, C Busseret, C Plossu, Stéphane Burignat (UGent) , B Balland and P Boivin

(2003) JOURNAL OF NON-CRYSTALLINE SOLIDS. 322(1-3). p.240-245