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Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements
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TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition
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- Journal Article
- A1
- open access
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)
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Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition
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Texture of cobalt germanides on Ge(100) and Ge(111) and its influence on the formation temperature
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In situ X-ray diffraction study of thin film Ir/Si solid state reactions
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In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100)
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In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition
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The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction
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In situ study of the formation of silicide phases in amorphous Co-Si mixed layers
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- Conference Paper
- P1
- open access
The texture of thin NiSi films and its effect on agglomeration
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Comparison of thermal and plasma enhanced ALD/CVD of vanadium pentoxide
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In situ x-ray diffraction study of metal induced crystallization of amorphous germanium
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Ru thin film grown on TaN by plasma enhanced atomic layer deposition
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Modeling the conformality of atomic layer deposition: the effect of sticking probability
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- Conference Paper
- C3
- open access
Modeling the conformality of atomic layer deposition: the effect of sticking probability
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In situ study of the formation of silicide phases in amorphous Ni-Si mixed layers
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Metal in-diffusion during Fe and co-germanidation of germanium
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Formation and stability of NiSi in the presence of Co and Fe alloying elements
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- Conference Paper
- C3
- open access
Conformality of thermal and plasma enhanced ALD
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Epitaxial formation of a metastable hexagonal nickel-silicide
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Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition
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Yttrium silicide formation and its contact properties on Si(100)
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In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
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Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium
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Physical and optical properties of ZnO thin films grown by DC sputtering deposition
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- Journal Article
- A1
- open access
Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors
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Fundamentals of intrinsic stress during silicide formation
(2007) Sixth international conference of the Balkan Physical Union. In AIP Conference Proceedings 899. p.453-454 -
Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium
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Oxidation suppression in ytterbium silicidation by Ti/TiN bicapping layer
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Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer
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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O
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Effect of Pt addition on the stress of NiSi film formed on Si(100).
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Characterization of the texture of silicide films using electron backscattered diffraction
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Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements
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Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
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In-situ X-ray diffraction measurements for monitoring carbide and silicide phase formation
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In-situ X-ray diffraction measurements for monitoring carbide and silicide phase formation
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Point-defect generation in Ni-,Pd-, and Pt-germanided Schottky barriers on n-type germanium
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- Journal Article
- A1
- open access
Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors
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Tungsten carbides as a diffusion barrier for Cu metallization
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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium
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Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium
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Linear growth of Ni2Si thin film on n+/p junction at low temperature
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Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation
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High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation
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Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction
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Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer
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CoSi2 formation in the presence of Ti, Ta or W
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Low-temperature formation of CoSi2 in the presence of Au
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Room temperature grain growth in sputtered Cu films
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Room temperature grain growth in sputtered Cu films
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Room-temperature grain growth in sputter-deposited Cu films
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Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems
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A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.
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CoSi2 formation using a Ti capping layer-Influence of processing conditions on CoSi2 nucleation
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The influence of Ti and TiN on the thermal stability of cobaltdisilicide
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Sillicide formation for Ni and Pd bilayers on Si(100) substrates
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The influence of Ti and TiN on the thermal stability of CoSi/sub 2 /
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CoSi/sub 2/ formation using a Ti capping layer-the influence of processing conditions on CoSi/sub 2/ nucleation
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Silicide formation for Ni and Pd bilayers on Si (100) substrates
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Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.
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CoSi2 formation in the presence of carbon.
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The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon
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Nucleation of COSi2 and MnSi1.7 in the Co/Mn/Si ternary system
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Nucleation of CoSi/sub 2/ and MnSi/sub 1.7/ in the Co/Mn/Si ternary system
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CoSi2 formation through SiO2
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Orientation-dependent stress build-up during the formation of epitaxial CoSi2.
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Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.
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Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.
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The dependence of the etching property of CoSi2 films in diluted HF solutions on the formation conditions.
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CoSi2 nucleation in the presence of Ge.
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- Journal Article
- A1
- open access
Influence of mixing entropy on the nucleation of CoSi2
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The influence of mixing entropy on the nucleationof CoSi2.
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Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction
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Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.
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A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy.
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Nondestructive characterization of thin silicides using x-ray reflectivity.
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Influence of Ti on CoSi2 nucleation.
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CoSi2 formation in the Ti/Co/SiO2/Si system
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Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111).
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The influence of Ti cappings layes on CoSi2 formation.
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Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction.
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Formation and characterization of SPE grown ultra-thin cobalt disilicide film
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A BEEM study of PtSi Schottky contacts on ion-milled Si
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The influence of Ti capping layers on CoSi2 formation in tee presence of interfacial oxide
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A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes.
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The influence of Ti capping layers on CoSi/sub 2/ formation in the presence of interfacial oxide
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CoSi2 formation in the presence of interfacial silicon oxide.
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An atomic force microscopy study of thin CoSi2 films formed by solid state reaction
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Non-destructive characterization of thin silicides using X-ray reflectivity
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Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment.