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Temperature effects on interdiffusion of Al and U-Mo under irradiation
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U(Mo) grain refinement induced by irradiation with high energy iodine
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The initial formation stages of a nanobubble lattice in neutron irradiated U(Mo)
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Pore pressure estimation in irradiated UMo
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- Conference Paper
- C3
- open access
Thermal expansion coefficients of Ni, Pt and Pd germanides and silicides
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Controllable nitrogen doping in as deposited TiO₂ film and its effect on post deposition annealing
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Plasma-enhanced ALD of platinum with O₂, N₂ and NH₃ plasmas
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- Conference Paper
- C3
- open access
Comparison of three processes for plasma-enhanced ALD of platinum
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- Journal Article
- A1
- open access
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
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- Journal Article
- A1
- open access
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
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Electrical discharge machining of ZrO2 toughened WC composites
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Texture of atomic layer deposited ruthenium
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Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
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Comparison of thermal and plasma enhanced ALD/CVD of vanadium pentoxide
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Atomic layer deposition of titanium nitride from TDMAT precursor
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The effect of silicon on the interaction between metallic uranium and aluminum: A 50 year long diffusion experiment
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Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma