Ghent University Academic Bibliography

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Improved diffusion barrier properties and NiSi thermal stability for the Cu contact with the Ru/TaSiN stack on NiSi/Si

Xin-Ping Qu, Xiao-Meng Zhang, Ying Zhao, Shaoren Deng (UGent) and Christophe Detavernier (UGent)

(2013) ECS SOLID STATE LETTERS. 2(1). p.P1-P3
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- Journal Article
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Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Xiao Guo, Yang Tang, Yu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, David Wei Zhang, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2013) MICROELECTRONIC ENGINEERING. 106. p.121-124
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- Journal Article
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TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi

Yu-Long Jiang, Qi Xie (UGent) , Xin-Ping Qu, David W Zhang, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2012) ELECTROCHEMICAL AND SOLID STATE LETTERS. 15(1). p.H9-H13
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Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics

Shao-Feng Ding, Qi Xie (UGent) , Fei Chen, Hai-Sheng Lu, Shaoren Deng (UGent) , Davy Deduytsche (UGent) , Christophe Detavernier (UGent) and Xin-Ping Qu

(2012) ECS SOLID STATE LETTERS. 1(3). p.P54-P56
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- Journal Article
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Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors

Qi Xie (UGent) , Shaoren Deng (UGent) , Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2012) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 27(7).
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- Journal Article
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Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact

Yu-Long Jiang, Qi Xie (UGent) , Xin-Ping Qu, Guo-Ping Ru, David W Zhang, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(12). p.H487-H490
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- Journal Article
- A1
Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

Xiao-Rong Wang, Yu-Long Jiang, Qi Xie (UGent) , Christophe Detavernier (UGent) , Guo-Ping Ru, Xin-Ping Qu and Bing-Zong Li

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.573-577
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- Journal Article
- A1
TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

Qi Xie (UGent) , Davy Deduytsche (UGent) , Jan Musschoot, Roland Vanmeirhaeghe (UGent) , Christophe Detavernier (UGent) , Shao-Feng Ding and Xin-Ping Qu

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.646-650
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- Journal Article
- A1
- open access
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

Qi Xie (UGent) , Davy Deduytsche (UGent) , Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G20-G22
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- Journal Article
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The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru

Shao-Feng Ding, Qi Xie (UGent) , Steve Müeller, Thomas Waechtler, Hai-Sheng Lu, Stefan E Schulz, Christophe Detavernier (UGent) , Xin-Ping Qu and Thomas Gessner

(2011) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 158(12). p.H1228-H1232
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- Journal Article
- A1
Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor

Quan-Li Li, Qi Xie (UGent) , Yu-Long Jiang, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li, David W Zhang, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2011) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 26(12).
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- Conference Paper
- P1
- open access
Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics

Shao-Feng Ding, Qi Xie (UGent) , Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, Christophe Detavernier (UGent) , Guo-Ping Ru, Yu-Long Jiang and Xin-Ping Qu

(2011) 2011 IEEE international interconnect technology conference and materials for advanced metallization (IITC/MAM).
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- A1
- open access
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Dennis Lin, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G27-G30
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- Journal Article
- A1
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

Thomas Waechtler, Shao-Feng Ding, Lutz Hofmann, Robert Mothes, Qi Xie (UGent) , Steffen Oswald, Christophe Detavernier (UGent) , Stefan E Schulz, Xin-Ping Qu, Heinrich Lang, et al.

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.684-689
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- Journal Article
- A1
In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

Tao Chen, Shu-Yi Liu, Qi Xie, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Xin-Ping Qu

(2010) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 21(1). p.88-95
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- Journal Article
- A1
The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

Tao Chen, Shu-Yi Liu, Qi Xie (UGent) , Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Xin-Ping Qu

(2010) APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. 98(2). p.357-365
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- Journal Article
- A1
The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films

Qi Xie (UGent) , Yu-Long Jiang, Koen De Keyser, Christophe Detavernier (UGent) , Davy Deduytsche (UGent) , Guo-Ping Ru, Xin-Ping Qu and KN Tu

(2010) MICROELECTRONIC ENGINEERING. 87(12). p.2535-2539
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- Journal Article
- A1
Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yy-Long Jiang, Sven Van den Berghe, JunHu Liu and Christophe Detavernier (UGent)

(2010) APPLIED PHYSICS LETTERS. 97(22).
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- Journal Article
- A1
Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Qi Xie, Jan Musschoot, Christophe Detavernier (UGent) , Davy Deduytsche (UGent) , Roland Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li and Xin-Ping Qu

(2008) MICROELECTRONIC ENGINEERING. 85(10). p.2059-2063
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- Journal Article
- A1
Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Shiyang Zhu, Xin-Ping Qu, Roland Vanmeirhaeghe (UGent) , Christophe Detavernier (UGent) , Guo-Ping Ru, Felix Cardon and Bing-Zong Li

(2000) SOLID-STATE ELECTRONICS. 44(12). p.2217-2223

Academic Bibliography

Improved diffusion barrier properties and NiSi thermal stability for the Cu contact with the Ru/TaSiN stack on NiSi/Si

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi

Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics

Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors

Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact

Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru

Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor

Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

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