Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author="JOB, R" or (type any "bookEditor journalEditor issueEditor" and editor="JOB, R")

Add to list
- Journal Article
- A1
Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

YL HUANG, E SIMOEN, C CLAEYS, JM RAFI, Paul Clauws (UGent) , R JOB and WR FAHRNER

(2006) APPLIED PHYSICS LETTERS. 89(3).
Add to list
- Conference Paper
- P1
P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

YL HUANG, E SIMOEN, R JOB, C CLAEYS, W DUNGEN, Y MA, WR FAHRNER, Jorg Versluys and Paul Clauws (UGent)

(2005) SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES. 864. p.307-312
Add to list
- Journal Article
- A1
DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

YL HUANG, E SIMOEN, C CLAEYS, R JOB, Y MA, W DUNGEN, WR FAHRNER, Jorg Versluys and Paul Clauws (UGent)

(2005) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI. 108-109. p.547-552
Add to list
- Journal Article
- A1
Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

JM RAFI, E SIMOEN, C CLAEYS, YL HUANG, AG ULYASHIN, R JOB, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2005) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 152(1).
Add to list
- Journal Article
- A1
Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2003) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 150(9).
Add to list
- Journal Article
- A1
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEON, C CLAEYS, R LOO, Olivier De Gryse, Paul Clauws (UGent) , R JOB, AG ULYASHIN and W FAHRNER

(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212
Add to list
- Conference Paper
- C1
Analysis of thermal donor formation in n-type CZ silicon

J RAFI, E SIMOEN, C CLAEYS, A ULYASHIN, R JOB, W FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) Analytical and diagnostic techniques for semiconductor materials, devices and processes. p.96-105
Add to list
- Conference Paper
- P1
Analysis of oxygen thermal donor formation in n-type Cz silicon

JM RAFI, E SIMOEN, C CLAEYS, AG ULYASHIN, R JOB, WR FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES. 2003(3). p.96-105
Add to list
- Journal Article
- A1
Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, Olivier De Gryse and Paul Clauws (UGent)

(2002) APPLIED PHYSICS LETTERS. 81(10). p.1842-1844
Add to list
- Conference Paper
- P1
The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2002) SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2. 2002(2). p.912-924

Academic Bibliography

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

Analysis of thermal donor formation in n-type CZ silicon

Analysis of oxygen thermal donor formation in n-type Cz silicon

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

Contents

Support

Contact