Ghent University Academic Bibliography

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Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Qi Xie (UGent) , YL Jiang, Jan Musschoot, Davy Deduytsche (UGent) , Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , S Van den Berghe, GP Ru, BZ Li and XP Qu

(2009) THIN SOLID FILMS. 517(16). p.4689-4693
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- Journal Article
- A1
Yttrium silicide formation and its contact properties on Si(100)

W HUANG, GP RU, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , YL JIANG, XP QU and BZ LI

(2008) MICROELECTRONIC ENGINEERING. 85(1). p.131-135
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- Journal Article
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Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Q XIE, Jan Musschoot, Davy Deduytsche (UGent) , Roland Vanmeirhaeghe (UGent) , Christophe Detavernier (UGent) , S VAN DEN BERGHE, YL JIANG, GP RU, BZ LI and XP QU

(2008) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 155(9).
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- Journal Article
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Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer

YL JIANG, Q XIE, Christophe Detavernier (UGent) , GP RU, XP QU, BZ LI, PK CHU and Roland Vanmeirhaeghe (UGent)

(2007) JOURNAL OF APPLIED PHYSICS. 102(3).
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- Journal Article
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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Q XIE, YL JIANG, Christophe Detavernier (UGent) , Davy Deduytsche (UGent) , Roland Vanmeirhaeghe (UGent) , GP RU, BZ LI and XP QU

(2007) JOURNAL OF APPLIED PHYSICS. 102(8).
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Linear growth of Ni2Si thin film on n+/p junction at low temperature

YL JIANG, GP RU, XP QU, BZ LI, Christophe Detavernier (UGent) and Roland Vanmeirhaeghe (UGent)

(2006) JOURNAL OF MATERIALS RESEARCH. 21(12). p.3017-3021
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- Journal Article
- A1
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

GP RU, Roland Vanmeirhaeghe (UGent) , Stefaan Forment, YL JIANG, XP QU, SY ZHU and BZ LI

(2005) SOLID-STATE ELECTRONICS. 49(4). p.606-611
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- Journal Article
- A1
Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

YL JIANG, GP RU, W HUANG, XP QU, BZ LI, A AGARWAL, G CAI, J POATE, Christophe Detavernier (UGent) and Roland Vanmeirhaeghe (UGent)

(2005) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 20(8). p.716-719
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- Journal Article
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Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction

XP QU, YL JIANG, GP RU, F LU, BZ LI, Christophe Detavernier (UGent) and Roland Vanmeirhaeghe (UGent)

(2004) THIN SOLID FILMS. 462-63. p.146-150

Academic Bibliography

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Yttrium silicide formation and its contact properties on Si(100)

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Linear growth of Ni2Si thin film on n+/p junction at low temperature

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction

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