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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
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Study of radiation defect characteristics in Ge doped Si structures
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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes
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Analysis of Auger recombination characteristics in high resistivity Si and Ge
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
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Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
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Microwave and infra red light absorption studies of carrier lifetime in silicon and germanium
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Metal implants-dependent carrier recombination characteristics in Ge
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Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge
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Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium
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Recombination peculiarities in doped Ge
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On the impact of metal impurities on the carrier lifetime in n-type germanium
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
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Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
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Carrier lifetime studies in Ge using microwave and infrared light techniques
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Study of recombination properties of neutron transmutation doped silicon wafers.
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ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.