Ghent University Academic Bibliography

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Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

C Claeys, R Ritzenthaler, T Schram, H Arimura, N Horiguchi and Eddy Simoen (UGent)

(2019) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 8(2). p.N25-N31
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- Conference Paper
- C3
Random telegraph noise: the key to single defect studies in nano-devices

Eddy Simoen (UGent) , W Fang, J Luo, C Zhao and C Claeys

(2015) E-MRS spring meeting, Abstracts.
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Random telegraph noise: the key to single defect studies in nano-devices

Eddy Simoen (UGent) , W Fang, M Aoulaiche, J Luo, C Zhao and C Claeys

(2015) THIN SOLID FILMS. 613. p.2-5
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What do we know about hydrogen-induced thermal donors in silicon?

E Simoen, YL Huang, Y Ma, Johan Lauwaert (UGent) , Paul Clauws (UGent) , JM Rafi, A Ulyashin and C Claeys

(2009) Journal of the Electrochemical Society. 156(6). p.H434-H442
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Metal in-diffusion during Fe and co-germanidation of germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2008) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII. 131-133. p.47-52
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Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2008) JOURNAL OF APPLIED PHYSICS. 104(2).
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A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

YL HUANG, E SIMOEN, C CLAEYS, JM RAFI and Paul Clauws (UGent)

(2007) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 18(7). p.705-710
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Lifetime and leakage current considerations in metal-doped germanium

E SIMOEN, C CLAEYS, S SIONCKE, J VAN STEENBERGEN, M MEURIS, Stefaan Forment, Jan Vanhellemont (UGent) , Paul Clauws (UGent) and Antoon Theuwis

(2007) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 18(7). p.799-804
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Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2006) APPLIED PHYSICS LETTERS. 89(20).
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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

YL HUANG, E SIMOEN, C CLAEYS, JM RAFI, Paul Clauws (UGent) , R JOB and WR FAHRNER

(2006) APPLIED PHYSICS LETTERS. 89(3).
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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Stefaan Forment and Paul Clauws (UGent)

(2006) APPLIED PHYSICS LETTERS. 88(18).
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMER, E SIMOEN, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Stefaan Forment and Paul Clauws (UGent)

(2006) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 9(4-5). p.554-558
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- Conference Paper
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P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

YL HUANG, E SIMOEN, R JOB, C CLAEYS, W DUNGEN, Y MA, WR FAHRNER, Jorg Versluys and Paul Clauws (UGent)

(2005) SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES. 864. p.307-312
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- Journal Article
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DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

YL HUANG, E SIMOEN, C CLAEYS, R JOB, Y MA, W DUNGEN, WR FAHRNER, Jorg Versluys and Paul Clauws (UGent)

(2005) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI. 108-109. p.547-552
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Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

JM RAFI, E SIMOEN, C CLAEYS, YL HUANG, AG ULYASHIN, R JOB, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2005) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 152(1).
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Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

Olivier DE GRYSE, Paul Clauws (UGent) , Jan Vanhellemont (UGent) , OI LEBEDEV, J VAN LANDUYT, E SIMOEN and C CLAEYS

(2004) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 151(9).
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DLTS studies of high-temperature electron irradiated Cz n-Si

V NEIMASH, M KRAS'KO, A KRAITCHINSKII, V VOYTOVYCH, V TISHCHENKO, E SIMOEN, JM RAFI, C CLAEYS, Jorg Versluys, Olivier De Gryse, et al.

(2004) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 201(3). p.509-516
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Grown-in lattice defects and diffusion in Czochralski-grown germanium

Jan Vanhellemont (UGent) , O DE GRYSE, S HENS, Piet Vanmeerbeek, Dirk Poelman (UGent) , Paul Clauws (UGent) , E SIMOEN, C CLAEYS, I ROMANDIC, Antoon Theuwis, et al.

(2004) DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII -. 230-232. p.149-176
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- Journal Article
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A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De Gryse, Jan Vanhellemont (UGent) , Paul Clauws (UGent) , O LEBEDEV, J VAN LANDUYT, E SIMOEN and C CLAEYS

(2003) PHYSICA B-CONDENSED MATTER. 340. p.1013-1017
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- Journal Article
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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2003) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 150(9).
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- Journal Article
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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEON, C CLAEYS, R LOO, Olivier De Gryse, Paul Clauws (UGent) , R JOB, AG ULYASHIN and W FAHRNER

(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212
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- Conference Paper
- C1
Analysis of thermal donor formation in n-type CZ silicon

J RAFI, E SIMOEN, C CLAEYS, A ULYASHIN, R JOB, W FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) Analytical and diagnostic techniques for semiconductor materials, devices and processes. p.96-105
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- Conference Paper
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Analysis of oxygen thermal donor formation in n-type Cz silicon

JM RAFI, E SIMOEN, C CLAEYS, AG ULYASHIN, R JOB, WR FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES. 2003(3). p.96-105
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- Journal Article
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Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

E SIMOEN, JM RAFI, C CLAEYS, V NEIMASH, A KRAITCHINSKII, M KRAS'KO, V TISCHENKO, V VOITOVYCH, Jorg Versluys and Paul Clauws (UGent)

(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188
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- Conference Paper
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Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Olivier De Gryse, Paul Clauws (UGent) , Jan Vanhellemont (UGent) , O LEBEDEV, J VAN LANDUYT, E SIMOEN and C CLAEYS

(2002) HIGH PURITY SILICON VII, PROCEEDINGS. p.183-194
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- Journal Article
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Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.

O De Gryse, Paul Clauws (UGent) , J Van Landuyt, O Lebedev, C Claeys, E Simoen and Jan Vanhellemont (UGent)

(2002) JOURNAL OF APPLIED PHYSICS. 91(4). p.2493-2498
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- Journal Article
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Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.

E SIMOEN, R LOO, C CLAEYS, Olivier De Gryse, Paul Clauws (UGent) , J VAN LANDUYT and O LEBEDEV

(2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13185-13193
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Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, Olivier De Gryse and Paul Clauws (UGent)

(2002) APPLIED PHYSICS LETTERS. 81(10). p.1842-1844
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The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2002) SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2. 2002(2). p.912-924
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- Journal Article
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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.

E SIMOEN, C CLAEYS, V PRIVITERA, S COFFA, M KOKKORIS, E KOSSIONIDES, G FANOURAKIS, AN LARSEN and Paul Clauws (UGent)

(2002) NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 37286.
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- Journal Article
- A2
High energy proton radiation induced defects in tin doped n-type silicon.

E SIMOEN, C CLAEYS, V PRIVITERA, S COFA, A LARSEN and Paul Clauws (UGent)

(2001) PHYSICA B-CONDENSED MATTER. 308-310.
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Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM.

Olivier De Gryse, Paul Clauws (UGent) , O LEBEDEV, J VAN LANDUYT, J VANHELLEMONT, C CLAEYS and E SIMOEN

(2001) PHYSICA B-CONDENSED MATTER. 308. p.294-297
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- Journal Article
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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.

C CLAEYS, E SIMOEN, VB NEIMASH, A KRAITCHINSKII, M KRAS'KO, O PUZENKO, Anja Blondeel and Paul Clauws (UGent)

(2001) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 148(12) G738-G745).
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Defect analysis of n-type silicon strained layers.

E SIMOEN, R LOO, P ROUSSEL, M CAYMAX, H BENDER, C CLAEYS, HJ HERZOG, Anja Blondeel and Paul Clauws (UGent)

(2001) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 4(1-3). p.225-227
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Tin doping effects in silicon

E SIMOEN, C CLAEYS, VB NEIMASH, A KRAITCHINSKII, M KRAS'KO, O PUZENKO, Anja Blondeel and Paul Clauws (UGent)

(2000) HIGH PURITY SILICON VI. 4218. p.223-235
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- C1
Tin-related deep levels in proton-irradiated n-type silicon.

E SIMOEN, C CLAEYS, VB NEIMASH, A KRAITCHINSKII, N KRASKO, O PUZENKO, Anja Blondeel and Paul Clauws (UGent)

(2000) Proceedings 2nd ENDEASD Workshop, Kista-Stockholm, Sweden 2000, Editor C.L. Claeys. p.147-156
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Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.

E SIMOEN, C CLAEYS, VB NEIMASH, A KRAITCHINSKII, N KRASKO, O PUZENKO, Anja Blondeel and Paul Clauws (UGent)

(2000) APPLIED PHYSICS LETTERS. 76(20). p.2838-2840
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Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy.

O DE GRYSE, Paul Clauws (UGent) , J VANHELLEMONT and C CLAEYS

(1997) DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3.
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ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.

J VANHELLEMONT, E SIMOEN, C CLAEYS, A KANIAVA, E GAUBAS, G BOSMAN, B JOHLANDER, L ADAMS and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(6) 1924-1931 Part 1).
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GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.

J VANHELLEMONT, A KANIAVA, E SIMOEN, MA TRAUWAERT, C CLAEYS, B JOHLANDER, R HARBOESORENSEN, L ADAMS and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(3) 479-486 Part 1).
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Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon.

E SIMOEN, K DEBACKKER, C CLAEYS and Paul Clauws (UGent)

(1992) JOURNAL OF ELECTRONIC MATERIALS. 21(5). p.533-541
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STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.

MA TRAUWAERT, J VANHELLEMONT, E SIMOEN, C CLAEYS, B JOHLANDER, L ADAMS and Paul Clauws (UGent)

(1992) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 39(6) 1747-1753 Part 1).
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- Conference Paper
- C3
Fabrication of SOI layers on high resistivity silicon substrates

C CLAEYS, Paul Clauws (UGent) , B DIERICKX, H MAES, E SIMOEN, J VAN HELLEMONT, G WILLEMS and D WOUTERS

(1992) Extended Abstr. ECS-182, nr. 92-2, pp. 624-625, 5 figg.
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- Miscellaneous
DLTS of high-resistivity Si

E SIMOEN, C CLAEYS, G HUYLEBROECK and Paul Clauws (UGent)

(1991) Solid State Phenomena, 19-20, pp. 493-498, 6 figg.

Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

Random telegraph noise: the key to single defect studies in nano-devices

Random telegraph noise: the key to single defect studies in nano-devices

What do we know about hydrogen-induced thermal donors in silicon?

Metal in-diffusion during Fe and co-germanidation of germanium

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

Lifetime and leakage current considerations in metal-doped germanium

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

DLTS studies of high-temperature electron irradiated Cz n-Si

Grown-in lattice defects and diffusion in Czochralski-grown germanium

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

Analysis of thermal donor formation in n-type CZ silicon

Analysis of oxygen thermal donor formation in n-type Cz silicon

Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.

High energy proton radiation induced defects in tin doped n-type silicon.

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM.

Tin doping of silicon for controlling oxygen precipitation and radiation hardness.

Defect analysis of n-type silicon strained layers.

Tin doping effects in silicon

Tin-related deep levels in proton-irradiated n-type silicon.

Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.

Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy.

ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.

GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.

Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon.

STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.

Fabrication of SOI layers on high resistivity silicon substrates

DLTS of high-resistivity Si