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The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
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Jan Vanhellemont : 35 years of materials research in microelectronics
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- Journal Article
- A1
- open access
A statistical model describing temperature dependent gettering of Cu in p-type Si
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- Journal Article
- A1
- open access
Estimation of the temperature dependent interaction between uncharged point defects in Si
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Vacancies in Si and Ge
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Intrinsic point defect behavior close to silicon melt/solid interface
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Comment on 'Experimental study of the impact of stress on the point defect incorporation during silicon growth' [ECS Solid State Lett., 3, N5 (2014)]
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An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si
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Stress and doping impact on intrinsic point defects in silicon and germanium
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Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials
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Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
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Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt
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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon
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Impact of plane thermal stress near the melt/solid interface on the v/G criterion for defect-free large diameter single crystal Si growth
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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon
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Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
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Silicon single crystal growth from a melt: on the impact of dopants on the v/G criterion
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Surface-induced charge at a Ge (100) dimer surface and its interaction with vacancies and self-interstitials
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Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth
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Doppler broadening spectroscopy of positron annihilation near Ge and Si (001) single crystal surfaces