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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
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- Journal Article
- A1
- open access
Germanium doping for improved silicon substrates and devices
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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
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Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
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What do we know about hydrogen-induced thermal donors in silicon?
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Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
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A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon
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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon
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Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon
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DLTS studies of high-temperature electron irradiated Cz n-Si
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Analysis of oxygen thermal donor formation in n-type Cz silicon
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Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188 -
Developments for radiation hard silicon detectors by defect engineering - Results by the CERN RD48 (ROSE) collaboration