Ghent University Academic Bibliography

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- Journal Article
- A1
Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography.

PJ MCNALLY, T TUOMI, D LOWNEY, Koen Jacobs, AN DANILEWSKY, R RANTAMAKI, M O'HARE and L CONSIDINE

(2001) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 185(2). p.373-382
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- Journal Article
- A1
Material optimisation for AlGaN/GaN HFET applications.

Zahia Bougrioua, Ingrid Moerman (UGent) , N SHARMA, RH WALLIS, Jan Cheyns, Koen Jacobs, EJ THRUSH, L CONSIDINE, R BEANLAND, JL FARVACQUE, et al.

(2001) JOURNAL OF CRYSTAL GROWTH. 230(3-4). p.573-578
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- Journal Article
- A1
Chemical mapping of InGaN MQWs.

N SHARMA, D TRICKER, Paul Thomas, Zahia Bougrioua, Koen Jacobs, J CHEYNS, Ingrid Moerman (UGent) , T THRUSH, L CONSIDINE, A BOYD, et al.

(2001) JOURNAL OF CRYSTAL GROWTH. 230(3-4). p.438-441
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- Journal Article
- A1
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.

A STAFFORD, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman (UGent) , EJ THRUSH and L CONSIDINE

(2000) JOURNAL OF CRYSTAL GROWTH. 221. p.142-148
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- Conference Paper
- C1
Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.

A STAFFORD, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman (UGent) , EJ THRUSH and L CONSIDINE

(2000) The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan. p.84-85
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- Journal Article
- A1
Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy.

P RUTERANA, G NOUET, Wim Van Der Stricht, Ingrid Moerman (UGent) and L CONSIDINE

(1998) APPLIED PHYSICS LETTERS. 72(14). p.1742-1744
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- Journal Article
- A1
Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.

Koen Vanhollebeke, L CONSIDINE, Ingrid Moerman (UGent) , Piet Demeester (UGent) , EJ THRUSH and JA CRAWLEY

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.644-647
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- Journal Article
- P1
High indium content InGaN films and quantum wells.

W VAN DER STRICHT, Koen Jacobs, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH, J CRAWLEY and P RUTERANA

(1998) NITRIDE SEMICONDUCTORS. p.107-112
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- Conference Paper
- C1
Epitaxial lateral overgrowth of GaN by OMVPE.

Koen Jacobs, Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , Steven Verstuyft (UGent) , K CAEKEBEKE, Peter Van Daele (UGent) , L CONSIDINE and EJ THRUSH

(1998) Proc. of the Third Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Gent, Belgium, pp. 149-152 ; URSI Forum'98, 10 December 1998, Brussels, Belgium, pp. 32..
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- Conference Paper
- C1
InGaN/GaN MQW blue light emitting diodes grown by OMVPE.

Wim Van Der Stricht, Koen Jacobs, K CAEKEBEKE, Steven Verstuyft (UGent) , Ingrid Moerman (UGent) , Peter Van Daele (UGent) , Piet Demeester (UGent) , L CONSIDINE and EJ TRUSH

(1998) Proc. of the Third Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, Gent, Belgium. p.237-240
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- Journal Article
- A1
Growth and in situ monitoring of GaN using IR interference effects.

L CONSIDINE, EJ THRUSH, JA CRAWLEY, K JACOBS, W VAN DER STRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , GH PARK, SJ HWANG and JJ SONG

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.192-198
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- Journal Article
- A1
MOVPE growth optimization of high quality InGaN films.

W VANDERSTRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH and JA CRAWLEY

(1997) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 2(16) 1-6).
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- Journal Article
- A2
MOVPE growth optimization of high quality InGaN films

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH and JA CRAWLEY

(1997) Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France.
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- Conference Paper
- C1
High Indium content InGaN films and quantum wells

Wim Van Der Stricht, Koen Jacobs, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH, JA CRAWLEY and P RUTERANA

(1997) Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. p.107-112

Academic Bibliography

Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography.

Material optimisation for AlGaN/GaN HFET applications.

Chemical mapping of InGaN MQWs.

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.

Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.

Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy.

Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.

High indium content InGaN films and quantum wells.

Epitaxial lateral overgrowth of GaN by OMVPE.

InGaN/GaN MQW blue light emitting diodes grown by OMVPE.

Growth and in situ monitoring of GaN using IR interference effects.

MOVPE growth optimization of high quality InGaN films.

MOVPE growth optimization of high quality InGaN films

High Indium content InGaN films and quantum wells

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