Ghent University Academic Bibliography

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Deep levels in silicon-oxygen superlattices

Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns

(2016) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 31(2).
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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns

(2016) Physica Status Solidi C-Current Topics in Solid State Physics. 13(10-12). p.718-723
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- Conference Paper
- P1
- open access
Study of electrically active defects in epitaxial layers on silicon

Eddy Simoen (UGent) , SK Dhayalan, S Jayachandran, S Gupta, F Gencarelli, A Hikavyy, R Loo, E Rosseel, A Delabie, M Caymax, et al.

(2016) 2016 China semiconductor technology international conference (CSTIC).
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Ge1-xSnx optical devices : growth and applications

Y Shimura, W Wang, W Vandervorst, F Gencarelli, A Gassenq, Günther Roelkens (UGent) , A Vantomme, M Caymax and R Loo

(2014) SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. In ECS Transactions 64(6). p.677-687
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- Conference Paper
- C3
- open access
High quality InP localized growth on (001) silicon substrate for photonics applications

Zhechao Wang (UGent) , M Pantouvaki, M Paladugu, B Tian, R Olivier, B Hugo, C Merckling, W Guo, J Dekoster, M Caymax, et al.

(2013) Progress in Electromagnetics Research Symposium, Abstracts.
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- Journal Article
- A1
Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

F IACOPI, PM VEREECKEN, M SCHAEKERS, M CAYMAX, N MOELANS, B BLANPAIN, O RICHARD, Christophe Detavernier (UGent) and H GRIFFITHS

(2007) NANOTECHNOLOGY. 18(50).
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- Journal Article
- A1
Defect analysis of n-type silicon strained layers.

E SIMOEN, R LOO, P ROUSSEL, M CAYMAX, H BENDER, C CLAEYS, HJ HERZOG, Anja Blondeel and Paul Clauws (UGent)

(2001) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 4(1-3). p.225-227
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- Journal Article
- A1
IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.

H OHYAMA, J VANHELLEMONT, Y TAKAMI, K HAYAMA, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1995) MATERIALS SCIENCE AND TECHNOLOGY. 11(4). p.429-435
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- Journal Article
- A1
INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.

H OHYAMA, J VANHELLEMONT, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1994) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 143(1). p.183-193
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- Journal Article
- A1
ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.

H OHYAMA, J VANHELLEMONT, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(3) 487-494 Part 1).
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- Journal Article
- A1
GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.

H OHYAMA, J VANHELLEMONT, Y TAKAMI, K HAYAMA, H SUNAGA, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1994) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 41(6) 2437-2442 Part 1).
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- Journal Article
- A1
FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

J VANHELLEMONT, MA TRAUWAERT, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1993) APPLIED PHYSICS LETTERS. 62(3). p.309-311
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- Journal Article
- A1
1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.

J VANHELLEMONT, MA TRAUWAERT, J POORTMANS, M CAYMAX and Paul Clauws (UGent)

(1992) THIN SOLID FILMS. 222(1-2). p.166-172

Academic Bibliography

Deep levels in silicon-oxygen superlattices

Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Study of electrically active defects in epitaxial layers on silicon

Ge1-xSnx optical devices : growth and applications

High quality InP localized growth on (001) silicon substrate for photonics applications

Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

Defect analysis of n-type silicon strained layers.

IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.

INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.

ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.

GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.

FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.

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