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Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements
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Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures
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Quantitative study of charge trapping in SiO2 during bipolar Fowler-Nordheim injection
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Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells