Ghent University Academic Bibliography

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Your filters: cql: author="Mijlemans, P" or (type exact bookEditor and editor="Mijlemans, P")

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- Journal Article
- A1
Grown-in lattice defects and diffusion in Czochralski-grown germanium

Jan Vanhellemont (UGent) , O DE GRYSE, S HENS, Piet Vanmeerbeek, Dirk Poelman (UGent) , Paul Clauws (UGent) , E SIMOEN, C CLAEYS, I ROMANDIC, Antoon Theuwis, et al.

(2004) DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII -. 230-232. p.149-176
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- Conference Paper
- C1
InAlGaP materials and red emitting LEDs on GaAs and Ge substrates

Prasanta Modak, Mark D'Hondt, Ingrid Moerman (UGent) , Peter Van Daele (UGent) , P MIJLEMANS and Piet Demeester (UGent)

(2001) 9th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Proceedings. p.91-92
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- Journal Article
- A1
5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates.

Prasanta Modak, Mark D'Hondt, Ingrid Moerman (UGent) , Peter Van Daele (UGent) , P MIJLEMANS and Piet Demeester (UGent)

(2001) ELECTRONICS LETTERS. 37(6). p.377-378
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- Conference Paper
- P1
High-efficiency 650 nm thin-film light-emitting diodes.

C ROOMAN, R WINDISCH, Mark D'Hondt, Prasanta Modak, Ingrid Moerman (UGent) , P MIJLEMANS, B DUTTA, G BORGHS, Roger Vounckx (UGent) , Maarten Kuijk (UGent) , et al.

(2001) LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V. 4278. p.36-40
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- Journal Article
- A1
High-efficiency thin-film light-emitting diodes at 650 nm.

C ROOMAN, R WINDISCH, Mark D'Hondt, B DUTTA, Prasanta Modak, P MIJLEMANS, G BORGHS, Roger Vounckx (UGent) , Ingrid Moerman (UGent) , Maarten Kuijk (UGent) , et al.

(2001) ELECTRONICS LETTERS. 37(13). p.852-853
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- Journal Article
- A1
(Al)GaInP multiquantum well LEDs on GaAs and Ge.

Prasanta Modak, Mark D'Hondt, P MIJLEMANS, Ingrid Moerman (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(2000) JOURNAL OF ELECTRONIC MATERIALS. 29(1). p.80-85
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- Conference Paper
- C1
InAlGaP microcavity LEDs on Ge-substrates

Prasanta Modak, Mark D'Hondt, Danaë Delbeke (UGent) , P Mijlemans, Ingrid Moerman (UGent) , Roel Baets (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(2000) Metalorganic Vapor Phase Epitaxy, 10th International conference, Proceedings. p.319-320
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- Conference Paper
- C1
High efficiency InAlGaP microcavity LEDs on Ge-substrates

Prasanta Modak, Mark D'Hondt, Danaë Delbeke (UGent) , Ingrid Moerman (UGent) , Peter Van Daele (UGent) , Roel Baets (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(2000) Proceedings of the 2000 IEEE/LEOS Symposium Benelux Chapter. p.59-62
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- Journal Article
- A1
AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.

Prasanta Modak, Mark D'Hondt, Danaë Delbeke (UGent) , Ingrid Moerman (UGent) , Roel Baets (UGent) , Peter Van Daele (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(2000) IEEE PHOTONICS TECHNOLOGY LETTERS. 12(8). p.957-959
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- Conference Paper
- C1
High quality AlGaInP layers on GaAs and Ge grown by MOVPE.

Prasanta Modak, Joff Derluyn, Mark D'Hondt, P MIJLEMANS, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1999) Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. p.139-142
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- Conference Paper
- C1
(Al)GaInP multiquantum well LEDs on Ge and GaAs.

Prasanta Modak, Mark D'Hondt, Ingrid Moerman (UGent) , Peter Van Daele (UGent) , Piet Demeester (UGent) , Koen Vanhollebeke and P MIJLEMANS

(1999) Presented at the Ninth Biennial Workshop on Organometallic Vapor Phase Epitaxy, 23-27 May Ponte Vedra Beach, Florida, USA, p. 25.
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- Journal Article
- A2
Germanium - The all-purpose substrate of the future?

Mark D'Hondt, P MIJLEMANS, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1998) Compound Semiconductor Summer II. 4(6). p.30-31
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- Conference Paper
- C1
Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes.

Mark D'Hondt, Joff Derluyn, Ingrid Moerman (UGent) , Steven Verstuyft (UGent) , Peter Van Daele (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(1998) Proc. of the Third Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, Gent, Belgium. p.9-12
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- Conference Paper
- C1
High quality InGaAs/AlGaAs lasers grown on Ge substrates.

Mark D'Hondt, Zong-Qiang Yu (UGent) , Bart Depreter, Carl Sys (UGent) , Ingrid Moerman (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(1998) The Ninth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), 31 May - 4 June La Jolla, California.
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- Journal Article
- A1
High quality InGaAs/AlGaAs lasers grown on Ge substrates.

Mark D'Hondt, Zong-Qiang Yu (UGent) , Bart Depreter, Carl Sys (UGent) , Ingrid Moerman (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.655-659

Academic Bibliography

Grown-in lattice defects and diffusion in Czochralski-grown germanium

InAlGaP materials and red emitting LEDs on GaAs and Ge substrates

5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates.

High-efficiency 650 nm thin-film light-emitting diodes.

High-efficiency thin-film light-emitting diodes at 650 nm.

(Al)GaInP multiquantum well LEDs on GaAs and Ge.

InAlGaP microcavity LEDs on Ge-substrates

High efficiency InAlGaP microcavity LEDs on Ge-substrates

AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.

High quality AlGaInP layers on GaAs and Ge grown by MOVPE.

(Al)GaInP multiquantum well LEDs on Ge and GaAs.

Germanium - The all-purpose substrate of the future?

Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes.

High quality InGaAs/AlGaAs lasers grown on Ge substrates.

High quality InGaAs/AlGaAs lasers grown on Ge substrates.

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