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Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing
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Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).
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Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235 -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.
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Low temperature anneal of electron irradiation induced defects in p type silicon.
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Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.
(1996) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 36(1-3). p.196-199 -
LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.
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On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.