Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author="Langouche, G" or (type exact bookEditor and editor="Langouche, G")

Add to list
- Journal Article
- A1
Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing

A Falepin, Stefaan Cottenier (UGent) , C.M. Comrie, O Richard, H Bender, G Langouche and A Vantomme

(2003) Hyperfine Interactions. 151(1). p.131-144
Add to list
- Journal Article
- A1
Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).

MF WU, A VANTOMME, S HOGG, G LANGOUCHE, W VAN DER STRICHT, K JACOBS and Ingrid Moerman (UGent)

(2001) NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 174(1-2). p.181-186
Add to list
Elastic strain in InGaN and AlGaN layers

MF Wu, SD Yao, A Vantomme, S Hogg, G Langouche, Wim Van der Stricht, Koen Jacobs, Ingrid Moerman (UGent) , J Li and GY Zhang

(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235
Add to list
- Journal Article
- A1
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

A Vantomme, MF Wu, S Hogg, G Langouche, K Jacobs, Ingrid Moerman (UGent) , ME White, KP O'Donnell, L Nistor, J Van Landuyt, et al.

(2000) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 5(suppl. 1). p.U604-U609
Add to list
- Journal Article
- A1
Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.

MF WU, A VANTOMME, SM HOGG, G LANGOUCHE, Wim Van der Stricht, Koen Jacobs and Ingrid Moerman (UGent)

(1999) APPLIED PHYSICS LETTERS. 74(3). p.365-367
Add to list
- Journal Article
- A1
Low temperature anneal of electron irradiation induced defects in p type silicon.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VAN BAVEL, G LANGOUCHE and Paul Clauws (UGent)

(1998) MATERIALS SCIENCE AND TECHNOLOGY. 14(12). p.1295-1298
Add to list
- Journal Article
- A1
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS and Paul Clauws (UGent)

(1996) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 36(1-3). p.196-199
Add to list
- Journal Article
- A1
LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE and Paul Clauws (UGent)

(1995) APPLIED PHYSICS LETTERS. 66(22). p.3057-3058
Add to list
- Journal Article
- A1
On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

MA TRAUWAERT, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS and Paul Clauws (UGent)

(1995) ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4. 196-. p.1147-1151

Academic Bibliography

Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing

Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).

Elastic strain in InGaN and AlGaN layers

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.

Low temperature anneal of electron irradiation induced defects in p type silicon.

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.

On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

Contents

Support

Contact