Show
Sort by
-
Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
-
Reliability of p-GaN gate HEMTs in reverse conduction
-
- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization
-
Integration of 650 V GaN power ICs on 200 mm engineered substrates
-
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
-
Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates
-
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
-
- Journal Article
- A1
- open access
Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2
-
Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
-
Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
-
Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2
-
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
-
Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes
-
Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors
-
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics