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A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.
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Sillicide formation for Ni and Pd bilayers on Si(100) substrates
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Silicide formation for Ni and Pd bilayers on Si (100) substrates
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Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.
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Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction.
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Orientation-dependent stress build-up during the formation of epitaxial CoSi2.
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Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.
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CoSi2 formation through SiO2
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CoSi2 nucleation in the presence of Ge.
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Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.
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Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction
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The influence of mixing entropy on the nucleationof CoSi2.
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Photoluminescence of SrS: Cu, Ag thin films: influence of substrate and annealing conditions.
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A photoluminescence study of CaS: Pb thin films.
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Emission color of Cu and Ag doped ACTFEL devices: a microscopic study.
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Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.
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A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy.
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Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111).
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- Journal Article
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Influence of mixing entropy on the nucleation of CoSi2
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Nondestructive characterization of thin silicides using x-ray reflectivity.
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CoSi2 formation in the Ti/Co/SiO2/Si system
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Shallow electron traps induced by [Ru(CN)(6)](4-) in AgCl microcrystals: a computer simulation study of transient microwave photoconductivity.
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Influence of Ti on CoSi2 nucleation.
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Photoluminescence of SrS: Cu,Ag and SrS1-xSex: Cu,Ag thin films.
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Photoluminescent, electroluminescent and structural properties of CaS: Cu and CaS: Cu, Ag thin films.
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Determination of capture cross sections and trap depths of dominant centres in AgCl microcrystals doped with [Ru(CN)(6)](4-) complexes.
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Optical characterisation of SrS: Cu and SrS: Cu,Ag EL devices.
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Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction.
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The influence of Ti cappings layes on CoSi2 formation.
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A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments.
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A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes.
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The influence of Ti capping layers on CoSi/sub 2/ formation in the presence of interfacial oxide
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Thermally enhanced quantum efficiency in hydrogenated amorphous silicon p-i-n photodiodes studied by intensity-modulated photocurrent spectroscopy.
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CoSi2 formation in the presence of interfacial silicon oxide.
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Transient photoconductivity study of shallow electron traps in [Ru(CN)(6)](4-) doped AgCl microcrystals: effects of doping concentration and position.
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Intrinsic optical and structural properties of SrS thin films.
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BEEM studies of the PtSi/Si(100) interface electronic structure.
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Effects of rapid thermal annealing on electron beam evaporated SrS: Ce thin film electroluminescent devices made in H2S ambient.
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Photoluminescence study of SrS: Cu, Ag and SrS1-xSex: Cu, Ag thin films
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Formation and characterization of spe grown ultra-thin cobalt disilicide film.
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Optical time resolved spectroscopy of SrS: Cu, Ag ACTFEL devices
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The influence of Ti capping layers on CoSi2 formation in tee presence of interfacial oxide
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Formation and characterization of SPE grown ultra-thin cobalt disilicide film
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A BEEM study of PtSi Schottky contacts on ion-milled Si
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A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers.
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Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment.
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An atomic force microscopy study of thin CoSi2 films formed by solid state reaction
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Non-destructive characterization of thin silicides using X-ray reflectivity
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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching.
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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.
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A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.
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Influence of the growth conditions on the properties of CaS:Eu electroluminescent thin films.
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Possibilities and limitations of blue electroluminescence in CaS:Pb2+ thin films.
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Electrochemical reduction vs, vapour deposition for n-GaAs/Cu Schottky-barrier formation : a comparative study
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Quantitative prediction of acceptor concentration reduction in boron doped silicon due to electron irradiation
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The occurrence of multiple dielectric-loss curves for silver halide emulsions: difficulties of interpretation
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Transient microwave photoconductivity and computer simulation study of and Rh^+ doped Agi Microcrystals
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An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.
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A DETAILED XPS STUDY OF THE RARE-EARTH COMPOUNDS EUS AND EUF3.
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AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES.
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Electrical-transport in (100)CoSi2/Si contacts.
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THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.
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A method for evaluating the frequence characteristics of ac thin film electroluminescent devices.
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TRANSIENT MICROWAVE PHOTOCONDUCTIVITY AND COMPUTER-SIMULATION STUDY OF IR3+-DOPED AND RH3+-DOPED AGCL MICROCRYSTALS.
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A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU/N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING.
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Hydrogen passivation caused by 'soft' sputter etch cleaning of Si.
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OCCURRENCE OF MULTIPLE DIELECTRIC-LOSS CURVES FOR SILVER-HALIDE EMULSIONS - DIFFICULTIES OF INTERPRETATION.
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Thin film electroluminescence in SrS:Ce: the quest for blue light
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Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.
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XPS study of TbF3 and TbOF centres in ZnS.
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COMPUTER-SIMULATION OF TRANSIENT MICROWAVE PHOTOCONDUCTIVITY IN SILVER-HALIDE MICROCRYSTALS.
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Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.
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ON THE INFLUENCE OF SPUTTER ETCH CLEANING ON THE SILICIDATION, THE THERMAL-STABILITY AND THE ELECTRICAL CHARACTERISTICS OF TI/P-SI CONTACTS.
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EFFECT OF MOISTURE ON PERFORMANCE OF SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.
(1993) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 32(8). p.3477-3480 -
ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL/N-GAAS CONTACTS.
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TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION.
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DETERMINATION OF THE CONCENTRATION OF INTERSTITIAL SILVER IONS IN SILVER-HALIDE EMULSION GRAINS BY MEANS OF DIELECTRIC-LOSS MEASUREMENTS - DIFFICULTIES OF INTERPRETATION.
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RECOMBINATION IN SEMICONDUCTOR ELECTRODES - INVESTIGATION BY THE ELECTRICAL AND OPTOELECTRICAL IMPEDANCE METHOD.
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On the role of defects in some compound semiconductor (GaAs, InP, CdTe) Schottky Barriers
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RECOMBINATION IN SEMICONDUCTOR ELECTRODES - INVESTIGATION BY THE ELECTRICAL-IMPEDANCE METHOD.
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THE INFLUENCE OF SE COEVAPORATION ON THE ELECTROLUMINESCENT PROPERTIES OF SRSCE THIN-FILMS.
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Spectral shifts in thin film electroluminescent devices: an interference effect.
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A QUANTITATIVE-ANALYSIS OF CAPACITANCE PEAKS IN THE IMPEDANCE OF AL/SIOX/P-SI TUNNEL-DIODES.
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Titanium silicide p-Si Schottky barriers formed by rapid thermal processing in nitrogen
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On the relationship between the surface composition of the substrate and the Schottky-barrier height in Au/n-CdTe contacts
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AN INVESTIGATION ON THE INFLUENCE OF SI SURFACE PRETREATMENT ON THE FREQUENCY-DEPENDENCE OF THE IMPEDANCE OF CO N-SI SCHOTTKY BARRIERS
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A STUDY OF SPUTTER-INDUCED DEFECTS IN MAGNETRON-SPUTTERED COSI2 AND TISI2 SCHOTTKY BARRIERS ON NORMAL-TYPE AND PARA-TYPE GAP
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TITANIUM SILICIDE/P-SI SCHOTTKY BARRIERS FORMED BY RAPID THERMAL-PROCESSING IN NITROGEN
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ON THE RELATIONSHIP BETWEEN THE SURFACE-COMPOSITION OF THE SUBSTRATE AND THE SCHOTTKY-BARRIER HEIGHT IN AU/N-CDTE CONTACTS
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On the electrical properties, the interfacial reactivity and the thermal stability of CoSi₂/-, TiSi₂/-, Co/- and Ti/p-InP Schottky barriers
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A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers
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A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi₂/Si Schottky barriers
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The growth of thin oxide layers on GaAs in methanol
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Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers
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On the influence of the thin interfacial oxide layer on the electrical and photovoltaic properties of Au/oxide/p-InP diodes
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On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
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The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures
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Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers
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A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces
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Characteristics of the RuO₂-n-GaAs Schottky barrier