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Controlling the formation and stability of ultra-thin nickel silicides : an alloying strategy for preventing agglomeration
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Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100) : nucleation and solid solubility of the monosilicides
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The role of composition and microstructure in Ni-W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si
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Formation of ultrathin Ni germanides : solid-phase reaction, morphology and texture
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Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)
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Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides
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On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films
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Ge1-xSnx optical devices : growth and applications
(2014) SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. In ECS Transactions 64(6). p.677-687 -
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On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction
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Effect of high temperature deposition on CoSi2 phase formation
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On the growth kinetics of Ni(Pt) silicide thin films
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Lattice position and thermal stability of diluted As in Ge
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Determination of the dominant diffusing species during nickel and palladium germanide formation
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- Journal Article
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Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure
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- Journal Article
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In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)
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- Journal Article
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Sn diffusion during Ni germanide growth on Ge1-xSnx
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Lattice location study of ion implanted Sn and Sn-related defects in Ge
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In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100)
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In situ X-ray diffraction study of thin film Ir/Si solid state reactions
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Diluted manganese on the bond-centered site in germanium
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The influence of Pt redistribution on Ni1-xPtxSi growth properties
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The role of lattice mismatch and kinetics in texture development: Co1-xNixSi2 thin films on Si(100)
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Dependence of the sticking coefficient of sputtered atoms on the target-substrate distance
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Interpreting Mössbauer spectra reflecting an infinite number of sites : an application to Fe1-xSi synthesized by pulsed laser annealing
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Strain analysis in ultrathin silicide layers in Fe/CsCl-(FeSi)-Fe-57/Fe sandwiches
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Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing
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Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
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Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).
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Suppression of rare-earth implantation-induced damage in GaN
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The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 -
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer.
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Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235 -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
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Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.
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Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.
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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.
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Probing nitride thin films in 3-dimensions using a variable energy electron beam
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Probing nitride thin films in 3-dimensions using a variable energy electron beam