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- Journal Article
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Te-based chalcogenide materials for selector applications
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Conductive filaments multiplicity as a variability factor in CBRAM
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Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks
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Conductive-AFM tomography for 3D filament observation in resistive switching devices
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Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems
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Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells
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- Journal Article
- A1
- open access
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells
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High-k dielectrics for future generation memory devices (Invited Paper)