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Evidence of an impurity band at an n-GaN/sapphire interface
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Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.
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Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers.
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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures.
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Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE.
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Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.
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Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD.
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Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.
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Investigation into the transport properties of MBE grown GaN