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Jan Vanhellemont : 35 years of materials research in microelectronics
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- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
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Deep-level transient spectroscopy study of quenched-in defects in germanium
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- Journal Article
- A1
- open access
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge
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- Conference Paper
- C3
- open access
Mn related defect levels in germanium
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Temperature independent slow hole emission from transition metal centers in germanium
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- Conference Paper
- C3
- open access
Tunnel emission from Co and Cr-related levels in p-type Ge
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- Journal Article
- A1
- open access
Temperature-independent slow carrier emission from deep-level defects in p-type germanium
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- Conference Paper
- C3
- open access
A temperature independent emission component in the capacitance transients of deep-level defects in germanium
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- Journal Article
- A1
- open access
Electronic properties of iron and cobalt impurity centres in germanium
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- Conference Paper
- C3
- open access
DLTS and FTIR study of quenching induced defects in germanium
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- Conference Paper
- C3
- open access
Field-enhanced electron capture by iron impurities in germanium
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- Conference Paper
- C3
- open access
Defect creation and passivation by hydrogen plasma in silicon and germanium
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Majority carrier capture rates for transition metal impurities in germanium
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- Conference Paper
- C3
- open access
Recent developments in understanding and modeling of defects in Czochralski germanium
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- Journal Article
- A1
- open access
Decay mechanism of the nu(3) 865 cm(-1) vibration of oxygen in crystalline germanium
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Experimental and theoretical study of the thermal solubility of the vacancy in germanium
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Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys
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Electronic properties of titanium and chromium impurity centers in germanium
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What do we know about hydrogen-induced thermal donors in silicon?
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- Journal Article
- A1
- open access
Gallium interstitial in irradiated germanium : deep level transient spectroscopy
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Metal in-diffusion during Fe and co-germanidation of germanium
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Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium
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- Conference Paper
- C1
- open access
Electronic Properties of Transition Metal related Defects in Germanium
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An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data
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Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium
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Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium
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On the impact of metal impurities on the carrier lifetime in n-type germanium
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Lifetime and leakage current considerations in metal-doped germanium
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A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
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Electrical passivation by hydrogen of substitutional cobalt in monocrystalline germanium
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Study of thin film CuInS2-on-Cu-tape (CISCuT) solar cells using deep level transient spectroscopy (DLTS)
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Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond
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Deep level transient spectroscopy of transition metal impurities in germanium
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Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium.
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A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon
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Point-defect generation in Ni-,Pd-, and Pt-germanided Schottky barriers on n-type germanium
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Simulation of point defect diffusion in germanium
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Metals in germanium
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A photoluminescence and structural analysis of CuInS2-on-Cu-tape solar cells (CISCuT)
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Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy
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An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films
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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium
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Infrared analysis of the precipitated oxide phase in silicon and germanium
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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth
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Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium
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A deep-level transient spectroscopy study of transition metals in n-type germanium
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Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium
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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon
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Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy
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Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon
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P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon
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Precipitation and extended defect formation in silicon
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A PHOTOLUMINESCENCE AND STRUCTURAL ANALYSIS OF CuInS_2 – ON-Cu-TAPE SOLAR CELLS (CISCuT)
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DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
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Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals
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Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon
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PTIS investigation of hydrogenated CVD diamond films
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Photoluminescence study of polycrystalline CdS/CdTe thin film solar cells
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Critical precipitate size revisited and implications for oxygen precipitation in silicon
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- Journal Article
- A1
- open access
High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium
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Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy
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PHOTOLUMINESCENCE STUDY OF POLYCRYSTALLINE CdS/CdTe THIN FILM SOLAR CELLS
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DLTS studies of high-temperature electron irradiated Cz n-Si
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Extended defects in silicon: an old and new story
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Characterization of bulk microdefects in Ge single crystals
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Grown-in lattice defects and diffusion in Czochralski-grown germanium
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Characterisation of bulk microdefects in Ge single crystals
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Analysis of thermal donor formation in n-type CZ silicon
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Characterisation of deep defects in CdS/CdTe thin solar cells using Deep Level Transient Spectroscopy
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Analysis of oxygen thermal donor formation in n-type Cz silicon
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Characterization of deep defects in CdS/CdTe thin film solar cells using Deep Level Transient Spectroscopy
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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
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DLTS and admittance measurements on CdS/CdTe solar cells
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Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188 -
Chemical surface passivation of low resistivity p-type Ge wafers for solar cell applications
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A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon
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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212 -
High-resolution local vibrational mode spectroscopy of the negatively charged oxygen-vacancy complex in germanium
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A model for the formation of lattice defects at silicon oxide precipitates in silicon
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The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon
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On the nucleation of bulk stacking faults in CZ silicon
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Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
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Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.
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Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.
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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.
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Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.
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- Journal Article
- A1
- open access
Local vibrational mode spectroscopy of dimer and other oxygen-related defects in irradiated and thermally annealed germanium
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High energy proton radiation induced defects in tin doped n-type silicon.
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Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.
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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.
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Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM.
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Defect analysis of n-type silicon strained layers.
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Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation.
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Enhanced oxygen dimer and thermal donor formation in irradiated germanium studied by local vibrational mode spectroscopy.
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- Journal Article
- A1
- open access
O isotope effects and vibration-rotation lines of interstitial oxygen in germanium
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Tin doping effects in silicon
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Developments for radiation hard silicon detectors by defect engineering - Results by the CERN RD48 (ROSE) collaboration