Ghent University Academic Bibliography

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On the growth kinetics of Ni(Pt) silicide thin films

J Demeulemeester, D Smeets, CM Comrie, NP Barradas, A Vieira, Charlotte Van Bockstael, Christophe Detavernier (UGent) , K Temst and A Vantomme

(2013) JOURNAL OF APPLIED PHYSICS. 113(16).
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Lattice position and thermal stability of diluted As in Ge

S Decoster, U Wahl, Stefaan Cottenier (UGent) , JG Correia, T Mendonca, LM Amorim, LMC Pereira and A Vantomme

(2012) JOURNAL OF APPLIED PHYSICS. 111(5).
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Determination of the dominant diffusing species during nickel and palladium germanide formation

CM Comrie, D Smeets, KJ Pondo, C van der Walt, J Demeulemeester, Werner Knaepen (UGent) , Christophe Detavernier (UGent) , A Habanyama and A Vantomme

(2012) THIN SOLID FILMS. 526. p.261-268
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Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

S Decoster, B Johannessen, CJ Glover, Stefaan Cottenier (UGent) , T Bierschenk, H Salama, F Kremer, K Temst, A Vantomme and MC Ridgway

(2012) APPLIED PHYSICS LETTERS. 101(26).
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In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

J Demeulemeester, Werner Knaepen (UGent) , D Smeets, A Schrauwen, CM Comrie, NP Barradas, A Vieira, Christophe Detavernier (UGent) , K Temst and A Vantomme

(2012) JOURNAL OF APPLIED PHYSICS. 111(4).
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Sn diffusion during Ni germanide growth on Ge1-xSnx

J Demeulemeester, A Schrauwen, O Nakatsuka, S Zaima, M Adachi, Y Shimura, CM Comrie, C Fleischmann, Christophe Detavernier (UGent) , K Temst, et al.

(2011) APPLIED PHYSICS LETTERS. 99(21).
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Lattice location study of ion implanted Sn and Sn-related defects in Ge

S Decoster, Stefaan Cottenier (UGent) , U Wahl, JG Correia and A Vantomme

(2010) PHYSICAL REVIEW B. 81(15).
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In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100)

Werner Knaepen (UGent) , J Demeulemeester, J Jordan-Sweet, A Vantomme, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and C Lavoie

(2010) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 28(1). p.20-26
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In situ X-ray diffraction study of thin film Ir/Si solid state reactions

Werner Knaepen (UGent) , J Demeulemeester, Davy Deduytsche (UGent) , JL Jordan-Sweet, A Vantomme, Roland Vanmeirhaeghe (UGent) , Christophe Detavernier (UGent) and C Lavoie

(2010) MICROELECTRONIC ENGINEERING. 87(3). p.258-262
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Diluted manganese on the bond-centered site in germanium

S Decoster, Stefaan Cottenier (UGent) , U Wahl, JG Correia, LMC Pereira, C Lacasta, MR Da Silva and A Vantomme

(2010) APPLIED PHYSICS LETTERS. 97(15).

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Academic Bibliography

On the growth kinetics of Ni(Pt) silicide thin films

Lattice position and thermal stability of diluted As in Ge

Determination of the dominant diffusing species during nickel and palladium germanide formation

Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

Sn diffusion during Ni germanide growth on Ge1-xSnx

Lattice location study of ion implanted Sn and Sn-related defects in Ge

In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100)

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

Diluted manganese on the bond-centered site in germanium

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