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Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium
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Recombination peculiarities in doped Ge
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On the impact of metal impurities on the carrier lifetime in n-type germanium
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
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Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
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Carrier lifetime studies in Ge using microwave and infrared light techniques
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Study of recombination properties of neutron transmutation doped silicon wafers.
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ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.