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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
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Atomic layer deposition-enabled single layer of tungsten trioxide across a large area
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- Journal Article
- A1
- open access
Determination of majority carrier capture rates via deep level transient spectroscopy
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- Journal Article
- A1
- open access
Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam
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p-State luminescence in CdSe nanoplatelets : role of lateral confinement and a longitudinal optical phonon bottleneck
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- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
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Polylactic acid as a biodegradable material for all-solution-processed organic electronic devices
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Effect of binder content in cu-in-se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells
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Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
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- Journal Article
- A1
- open access
First-principles study of possible shallow donors in ZnAl2O4 spinel