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- Journal Article
- A1
- open access
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma
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The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru
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Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor
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- Conference Paper
- C3
- open access
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
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Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
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- Conference Paper
- P1
- open access
Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics
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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing
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- Journal Article
- A1
- open access
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
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- Journal Article
- A1
- open access
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
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ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems